1. Product Science and Structural Stability
1.1 Crystal Chemistry and Bonding Characteristics
(Silicon Carbide Crucibles)
Silicon carbide (SiC) is a covalent ceramic composed of silicon and carbon atoms prepared in a tetrahedral latticework, mostly in hexagonal (4H, 6H) or cubic (3C) polytypes, each displaying exceptional atomic bond strength.
The Si– C bond, with a bond power of approximately 318 kJ/mol, is amongst the toughest in architectural porcelains, giving outstanding thermal security, solidity, and resistance to chemical attack.
This durable covalent network leads to a material with a melting factor exceeding 2700 ° C(sublimes), making it one of one of the most refractory non-oxide porcelains available for high-temperature applications.
Unlike oxide porcelains such as alumina, SiC maintains mechanical stamina and creep resistance at temperature levels over 1400 ° C, where lots of steels and traditional ceramics start to soften or break down.
Its low coefficient of thermal expansion (~ 4.0 × 10 ⁻⁶/ K) integrated with high thermal conductivity (80– 120 W/(m · K)) allows fast thermal cycling without tragic cracking, an important feature for crucible efficiency.
These innate properties originate from the balanced electronegativity and comparable atomic sizes of silicon and carbon, which promote an extremely secure and largely packed crystal framework.
1.2 Microstructure and Mechanical Resilience
Silicon carbide crucibles are usually fabricated from sintered or reaction-bonded SiC powders, with microstructure playing a crucial function in longevity and thermal shock resistance.
Sintered SiC crucibles are generated with solid-state or liquid-phase sintering at temperature levels over 2000 ° C, commonly with boron or carbon additives to enhance densification and grain boundary communication.
This process yields a fully dense, fine-grained framework with marginal porosity (
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